Core Technical Challenges
GaN Drive Reliability
High-Frequency EMI Suppression
Thermal Density Management
Specification | Value | Engineering Impact |
Power Density | 13.3 W/cm³ | ≥60% volume reduction vs. silicon-based solutions |
Carrier Frequency | ≥60 kHz | Output current ripple reduced to 1/5 of silicon solutions |
Input Voltage Range | ≤540 VDC | Tolerates industrial grid fluctuations (±15%) |
Protection Mechanisms | Over-temp/Over-voltage/Under-voltage/Over-current | Full fault response time<2 μs |
Key Technical Advantages
Space Efficiency Revolution
13.3 W/cm³ power density enables compact designs for space-constrained applications.
Precision Control Capability
60 kHz carrier frequency achieves ±0.25% speed fluctuation control, ensuring stable operation of sensitive loads.
Industrial Environment Robustness
540 VDC wide voltage input complies with EN 61000-4-11, withstanding 40% voltage sags within 10 ms.
Multi-Fault Protection
Quadruple protection circuits adopt hardware-direct-drive architecture; ≤1.5 μs overcurrent shutdown prevents power device avalanche failure.
